Editorial board
Editor-in-Chief
Koji Ishibashi Advanced Device Laboratory, RIKEN, Japan
Executive Editorial Board
Hongqi Xu Peking University, People’s Republic of China
Bao-Ping Zhang Xiamen University, People’s Republic of China
Editorial Board
Jon Bird University at Buffalo, The State University of New York, USA
Dhrubes Biswas Indian Institute of Technology Kharagpur, India
Bogdan Cretu ENSICAEN, France
Ayse Erol Istambul University, Turkey
Daniele Ielmini Politecnico di Milano, Italy
David C Johnson University of Oregon, USA
Tae-Woo Lee Seoul National University, Korea
Chi-Te Liang National Taiwan University, Taiwan
Chuan Liu Sun Yat-Sen University, People’s Republic of China
Nobuya Mori Osaka University, Japan
Eoin O’Reilly Tyndall National Institute, Ireland
Judy Rorison University of Bristol, UK
Thomas Schaepers Forschungszentrum Juelich Peter Gruenberg Institut, Germany
Eddy Simoen IMEC, Leuven, Belgium
Peter M Smowton Cardiff University, UK
Tae-Yeon Seong Korea University, Seoul, Korea
Hoe Tan Australian National University, Australia
Milan Tapajna Slovak Academy of Sciences, Slovakia
Ping Heng Tan Institute of Semiconductors, Chinese Academy of Sciences, People’s Republic of China
Vittorianna Tasco CNR NANOTEC, Italy
Maria Tchernycheva Université Paris-Sud, France
Ion Tiginyanu Academy of Sciences of Moldova, Moldova
Julio Cesar Tinoco University of Veracruz, Mexico
Wenzhuo Wu Purdue University, USA
Hsiao-Wen Zan National Chiao Tung University, Taiwan
Yuping Zeng University of Delaware, USA
Shengqiang Zhou Helmholtz-Zentrum Dresden-Rossendorf, Germany